Impact of the sequence of precursor introduction on the growth and properties of atomic layer deposited Al-doped ZnO films - - Institut de recherche et développement sur l'énergie photovoltaïque Access content directly
Journal Articles Journal of Vacuum Science & Technology A Year : 2018

Impact of the sequence of precursor introduction on the growth and properties of atomic layer deposited Al-doped ZnO films

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Chemical Sciences
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https://hal.science/hal-02148679

Submitted on : Monday, January 4, 2021-3:17:13 PM

Last modification on : Friday, April 19, 2024-4:18:56 PM

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hal-02148679 , version 1 (04-01-2021)

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Harold Le Tulzo, Nathanaelle Schneider, Daniel Lincot, Gilles Patriarche, Frédérique Donsanti. Impact of the sequence of precursor introduction on the growth and properties of atomic layer deposited Al-doped ZnO films. Journal of Vacuum Science & Technology A, 2018, 36 (4), pp.041502. ⟨10.1116/1.5030990⟩. ⟨hal-02148679⟩

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